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| HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFN 21N100Q VDSS = 1000 V = 21 A ID25 RDS(on) = 0.50 trr 250 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 1000 1000 20 30 21 84 21 60 2.5 5 520 -55 to +150 150 -55 to +150 V V V V A A A mJ J V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in. g G = Gate S = Source G S S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive -faster switching * Unclamped Inductive Switching (UIS) rated * Low RDS (on) 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 2500 3000 1.5/13 1.5/13 30 * Fast intrinsic diode * International standard package * miniBLOC with Aluminium nitride Mounting torque Terminal connection torque isolation for low thermal resistance * Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) * Molding epoxies meet UL 94 V-0 flammability classification Applications * DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 4.5 100 TJ = 125C 100 2 0.50 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1.5 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V * * * * Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages * Easy to mount VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % * * Space savings High power density 98762A (12/01) (c) 2001 IXYS All rights reserved IXFN 21N100Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 22 5900 VGS = 0 V, VDS = 25 V, f = 1 MHz 550 90 21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) 18 60 12 170 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 38 75 0.24 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr 18 td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 21 84 1.5 A A V N O P Q R S T U Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 1.4 8 250 ns C A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFN 21N100Q 35 TJ = 25OC 35 VGS = 9V 8V 7V 6V 5V 30 30 TJ = 125OC ID - Amperes ID - Amperes 25 20 15 10 5 25 20 15 10 VGS = 9V 8V 7V 6V 5V 5 4V 4V 0 0 0 5 10 15 20 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig.1 Output Characteristics @ Tj = 25C 2.8 VGS = 10V Fig.2 Output Characteristics @ Tj = 125C 2.6 VGS = 10V RDS(ON) - Normalized RDS(ON) - Normalized 2.4 TJ = 125OC 2.2 ID = 21A 2.0 1.6 1.8 ID =10.5A 1.2 1.4 TJ = 25OC 0.8 0 10 20 30 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig.3 RDS(on) vs. Drain Current 25 20 Fig.4 Temperature Dependence of Drain to Source Resistance 24 20 ID - Amperes ID - Amperes TJ = 150 C o 16 12 8 TJ = 25oC TJ = 125OC 15 10 5 0 4 0 3.0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 TC - Degrees C VGS - Volts Fig.5 Drain Current vs. Case Temperature (c) 2001 IXYS All rights reserved Fig.6 Drain Current vs Gate Source Voltage IXFN 21N100Q 10 8 VDS = 500 V ID = 21 A IG = 10 mA 30000 10000 Ciss 6 4 2 0 0 40 80 120 160 200 Capacitance - pF f = 100kHz Coss VGS - Volts 1000 Crss 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Fig.7 Gate Charge Characteristic Curve 80 Fig.8 Capacitance Curves 60 ID - Amperes 40 TJ = 125OC TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig.9 Drain Current vs Drain to Source Voltage 1.000 R(th)JC - K/W 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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